Figure 5From: Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications Narrow-scan XPS spectra from trilayer structure of Al 2 O 3 /HfO 2 /Al 2 O 3 on TiN-coated Si. (a) Al 2p, (b) Hf 4f peaks of Al2O3/HfO2/Al2O3 O 1-s peaks of (c) Al2O3, and (d) HfO2 layers.Back to article page