Figure 6From: Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications Schematics of proposed filament-switching mechanism of Pt/Al 2 O 3 /HfO 2 /Al 2 O 3 on TiN-coated Si. (a) Low resistance state (LRS) when applied voltage is less than set voltage. (b) High resistance state (HRS) when applied voltage is greater than reset voltage.Back to article page