Figure 11From: Conductive-bridging random access memory: challenges and opportunity for 3D architecture I-V hysteresis characteristics of a Cu/Ta2O5/W memory device. (a) Bipolar I-V hysteresis characteristics of a Cu/Ta2O5/W memory device. The memory device performs under a small operating voltage of ±1 V. Current compliance is 100 μA. (b) I-V hysteresis characteristics with a low current compliance of 5 pA are also obtained [17].Back to article page