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Figure 13 | Nanoscale Research Letters

Figure 13

From: Conductive-bridging random access memory: challenges and opportunity for 3D architecture

Figure 13

RESET current and DC switching cycles with current compliances. (a) RESET current (I RESET) with current compliances. The LRS decreases with increasing CCs. (b) DC switching cycles (>103) with different current compliances. The thickness of the switching material is about 15 nm. A 100-Ω series resistance was used during endurance measurement. The device size is 1 × 1 μm2 [17].

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