Figure 23
From: Conductive-bridging random access memory: challenges and opportunity for 3D architecture
Schematic view of a crossbar structured for gap-type atomic switch. (a) A positive bias applied on the Pt nanowire makes the device in HRS by forming a 1-nm gap between the two electrodes. (b) A conducting Ag bridge is formed inside the gap by electrochemical reaction with the help of negative bias on the Pt nanowire [38].