Figure 3From: Conductive-bridging random access memory: challenges and opportunity for 3D architectureSchematic illustration (a) and optical image (b) of the cross-point memory devices for 3D architecture. The area of the active cross-point is approximately 1.2 × 1.2 μm2. The thickness of the GeO x solid electrolyte film is approximately 10 nm [21].Back to article page