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Table 1 CBRAM material and deposition methods

From: Conductive-bridging random access memory: challenges and opportunity for 3D architecture

Device structure (TE/switching material/BE) Deposition methods Device size (μm)
TE Switching material BE
Ag/Ag33Ge20Se47/Ni [10] - Evaporation - 40, 75
Ag/Ag-GeSe/Pt [11] - RF sputtering Thermal evaporation 2 to 50
Al/Cu/Ge0.5Se0.5/W [12] Thermal Electron beam Sputtering 0.2 to 8.0
Ag or Cu/GeS/W [13] PVD PVD CVD 0.18 to 5
Ag/Sb:GeS2/W [14] - RF PVD - 0.2
Cu/Ta2O5/Pt [16] - RF sputtering - -
Cu/Ta2O5/W [17] Thermal evaporator E-beam evaporation Sputtering 0.2 to 8.0
Cu/Cu:SiO2/W [18] - E-beam evaporation CVD 0.35 to 5
Ag/a-Si/SiGe/W [22] - CVD Sputtering 0.05
Ag/Si3N4/Pt [23] RF sputtering PECVD RF sputtering 10
Cu/Cu-Te/GdO x /W [24] Sputtering Sputtering - 0.02, 0.05
Cu/Ta/TaSiO y /Ru [27] - PECVD - 0.05 to 1
Al/Cu/Ti/TaO x /W [29] Thermal Electron beam Sputtering 0.15
Cu-Te/Al2O3/Si [30] Co-sputtering ALD - -
Al/TiN/Cu/TiW/Al2O3/W [31] - ALD Sputtering 0.09