Table 1 CBRAM material and deposition methods
From: Conductive-bridging random access memory: challenges and opportunity for 3D architecture
Device structure (TE/switching material/BE) | Deposition methods | Device size (μm) | ||
|---|---|---|---|---|
TE | Switching material | BE | ||
Ag/Ag33Ge20Se47/Ni [10] | - | Evaporation | - | 40, 75 |
Ag/Ag-GeSe/Pt [11] | - | RF sputtering | Thermal evaporation | 2 to 50 |
Al/Cu/Ge0.5Se0.5/W [12] | Thermal | Electron beam | Sputtering | 0.2 to 8.0 |
Ag or Cu/GeS/W [13] | PVD | PVD | CVD | 0.18 to 5 |
Ag/Sb:GeS2/W [14] | - | RF PVD | - | 0.2 |
Cu/Ta2O5/Pt [16] | - | RF sputtering | - | - |
Cu/Ta2O5/W [17] | Thermal evaporator | E-beam evaporation | Sputtering | 0.2 to 8.0 |
Cu/Cu:SiO2/W [18] | - | E-beam evaporation | CVD | 0.35 to 5 |
Ag/a-Si/SiGe/W [22] | - | CVD | Sputtering | 0.05 |
Ag/Si3N4/Pt [23] | RF sputtering | PECVD | RF sputtering | 10 |
Cu/Cu-Te/GdO x /W [24] | Sputtering | Sputtering | - | 0.02, 0.05 |
Cu/Ta/TaSiO y /Ru [27] | - | PECVD | - | 0.05 to 1 |
Al/Cu/Ti/TaO x /W [29] | Thermal | Electron beam | Sputtering | 0.15 |
Cu-Te/Al2O3/Si [30] | Co-sputtering | ALD | - | - |
Al/TiN/Cu/TiW/Al2O3/W [31] | - | ALD | Sputtering | 0.09 |