Table 3 Performances of CBRAM devices
From: Conductive-bridging random access memory: challenges and opportunity for 3D architecture
Device structure (TE/switching material)/BE | Operation current (μA) | Retention time (s) | P/E endurance (cycles) |
|---|---|---|---|
Ag/10% Sb-GeS2/W [14] | 100 | 105 at 150°C | >105 |
Cu/Cu-doped SiO2/W [18] | 5 | 105 at 1 μA | 107 |
Cu/GeO x /W [20] | 50 | >106 at 85°C | >103 |
Cu/Cu-Te/GdO x /W [24] | 110 | 3.6 × 105 at 130°C | ~107 |
Al/Cu/Ti/TaO x /W [29] | 0.1 to 300 | 104 | 104 |
Al/TiN/Cu/TiW/Al2O3/W [31] | 25 | 6 × 102 at 125°C | 106 |