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Table 3 Performances of CBRAM devices

From: Conductive-bridging random access memory: challenges and opportunity for 3D architecture

Device structure (TE/switching material)/BE Operation current (μA) Retention time (s) P/E endurance (cycles)
Ag/10% Sb-GeS2/W [14] 100 105 at 150°C >105
Cu/Cu-doped SiO2/W [18] 5 105 at 1 μA 107
Cu/GeO x /W [20] 50 >106 at 85°C >103
Cu/Cu-Te/GdO x /W [24] 110 3.6 × 105 at 130°C ~107
Al/Cu/Ti/TaO x /W [29] 0.1 to 300 104 104
Al/TiN/Cu/TiW/Al2O3/W [31] 25 6 × 102 at 125°C 106