Table 1 The optimized process parameters of deposition for La 1 − x Al x O 3 film
Precursor | Deposition | Precursor | Oxidant | Precursor | Oxidant | |
---|---|---|---|---|---|---|
temperature (°C) | temperature (°C) | pulse time (s) | pulse time (s) | purge time (s) | purge time (s) | |
La | 180 | 280 | 0.3 | 0.3 | 4 | 8 |
Al | 25 | 0.1 | 0.1 | 3 | 4 |