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Table 1 The optimized process parameters of deposition for La 1 − x Al x O 3 film

From: The influence of process parameters and pulse ratio of precursors on the characteristics of La1 − x Al x O3 films deposited by atomic layer deposition

  Precursor Deposition Precursor Oxidant Precursor Oxidant
temperature (°C) temperature (°C) pulse time (s) pulse time (s) purge time (s) purge time (s)
La 180 280 0.3 0.3 4 8
Al 25 0.1 0.1 3 4