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Table 1 The optimized process parameters of deposition for La 1 − x Al x O 3 film

From: The influence of process parameters and pulse ratio of precursors on the characteristics of La1 − x Al x O3 films deposited by atomic layer deposition

 

Precursor

Deposition

Precursor

Oxidant

Precursor

Oxidant

temperature (°C)

temperature (°C)

pulse time (s)

pulse time (s)

purge time (s)

purge time (s)

La

180

280

0.3

0.3

4

8

Al

25

0.1

0.1

3

4

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