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Table 3 Percentage compositions of different atoms in samples

From: The influence of process parameters and pulse ratio of precursors on the characteristics of La1 − x Al x O3 films deposited by atomic layer deposition

 

Al2p (at%)

La3d (at%)

O1s (at%)

C1s (at%)

N1s (at%)

Sample A

28.12

12.73

57.25

1.48

0.42

Sample B

23.16

18.04

57.01

0.82

0.97

Sample C

19.16

19.54

60.30

0.94

0.36

Sample D

8.80

32.79

56.62

0.83

0.96

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