Skip to main content

Table 3 Percentage compositions of different atoms in samples

From: The influence of process parameters and pulse ratio of precursors on the characteristics of La1 − x Al x O3 films deposited by atomic layer deposition

  Al2p (at%) La3d (at%) O1s (at%) C1s (at%) N1s (at%)
Sample A 28.12 12.73 57.25 1.48 0.42
Sample B 23.16 18.04 57.01 0.82 0.97
Sample C 19.16 19.54 60.30 0.94 0.36
Sample D 8.80 32.79 56.62 0.83 0.96