Fig. 3From: A Unique Approach to Generate Self-Aligned SiO2/Ge/SiO2/SiGe Gate-Stacking Heterostructures in a Single Fabrication Step a Transfer and b output characteristics of the heterostructured SiO2/Ge QD/SiO2/SiGe n-MOSFETs measured at T = 77–300 K. High I on/I off ratio >106 and low off-state leakage of I off <10−13 A/μm are achievedBack to article page