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Fig. 1 | Nanoscale Research Letters

Fig. 1

From: Characterization and Effect of Thermal Annealing on InAs Quantum Dots Grown by Droplet Epitaxy on GaAs(111)A Substrates

Fig. 1

RHEED pattern during the growth of InAs QDs on sample L1. a (2×2) reconstruction of GaAs(111)A along \([21\bar {1}]\) direction before In deposition. b GaAs surface along \([21\bar {1}]\) direction at 100 °C showing presence of crystalline In spots (evidenced by arrows). c InAs QD spots along [011] direction at low temperature during arsenization showing a lattice matched InAs dots on GaAs(111)A surface. Arrows evidence the presence of twins. d InAs QD spots along [011] direction after annealing at 300 °C showing relaxation of InAs QDs

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