Fig. 4From: Characterization and Effect of Thermal Annealing on InAs Quantum Dots Grown by Droplet Epitaxy on GaAs(111)A Substrates1×1μ m 2 AFM scan on surface of samples L2 (a) and H1 (b). Size distribution of InAs QDs grown in series L (c) and H (d). Each dot is reported as a red square (sample L1 on c and sample H1 on d) and green diamond (sample L2 on c and sample H2 on d)Back to article page