Table 1 Growth parameters and morphological data for the two sets of samples: In amount deposited (here is reported the equivalent amount on GaAs(100) surface), substrate temperature during the annealing procedure, density of InAs QDs, percentage of deposited In incorporated in InAs QDs, mean value of radius, mean value of aspect ratio
Sample | In amount | T annealing | QD density | % of In deposited | Mean R | Mean AR |
|---|---|---|---|---|---|---|
(ML) | (°C) | (×108 cm −2) | incorporated in QDs | (nm) | ||
L1 | 1.5 | 300 | 161.2 | 100.0 | 25.2 ± 4.9 | 0.123 ± 0.015 |
L2 | 0.6 | 300 | 5.1 | 0.7 | 18.4 ± 4.7 | 0.055 ± 0.008 |
L3 | 0.4 | 300 | 0 | 0.0 | - | - |
H1 | 1.7 | 450 | 18.6 | 4.1 | 24.0 ± 2.6 | 0.084 ± 0.028 |
H2 | 1.5 | 450 | 10.4 | 2.9 | 22.9 ± 3.1 | 0.062 ± 0.015 |
H3 | 1.0 | 450 | 0 | 0.0 | - | - |