Fig. 3From: Optical characterization of In-flushed InAs/GaAs quantum dots emitting a broadband spectrum with multiple peaks at ~1 μmPhotoexcitation power dependence of RT–PL obtained from a as-grown InAs QDs and b In-flushed QDs. The excitation power densities were approximately 100 (black), 200 (blue), and 300 (red) W/cm2. c Schematic drawing of ML-step height fluctuations of the In-flushed QDsBack to article page