Fig. 2From: Seed/Catalyst-Free Growth of Gallium-Based Compound Materials on Graphene on Insulator by Electrochemical Deposition at Room Temperature a Top view and b cross-sectional view of FESEM images of Ga-based compound structures grown at current densities of 0.5, 1.5, 2.5, and 3.5 mA/cm2. NH4NO3 = 2.5 M, Ga(NO3)3 = 0.8 MBack to article page