Fig. 5
From: Novel 14-nm Scallop-Shaped FinFETs (S-FinFETs) on Bulk-Si Substrate
Improved SCE control parameters of DIBL and SS as the gate length scaling for fabricated S-FinFETs. a DIBL and SS are shown as a function of gate length for S-FinFETs and normal FinFETs. Simulated DIBL variations are included. b Simulated electrostatic potential as well as dE x /dx in different channels for explaining the improved DIBL in S-FinFETs