Fig. 7
From: Characterization of InSb Nanoparticles Synthesized Using Inert Gas Condensation
Reflectance spectrum for InSb NPs deposited on (111) p-type Si wafer using IGC process. The point of intersections indicated by arrows in the figure are 3470 and 4190 cm−1, which correspond to the energy of 0.43 and 0.52 eV. The different reflectance lines correspond to different areas of deposition for the same sample
