Fig. 4From: Uniformly Nanopatterned Graphene Field-Effect Transistors with Enhanced PropertiesExample SEM images of the NPG surface after removing the AAO mask. a NPG with a 30-s etching time. b NPG with a 40-s etching time. c The neck width in a is 25.0 ± 4.3 nm. d The neck width in b is 11.1 ± 3.2 nmBack to article page