Fig. 5
From: Uniformly Nanopatterned Graphene Field-Effect Transistors with Enhanced Properties
FET structure and electrical properties. a Schematic illustration of the FET device fabricated using the NPG. b SEM image showing the top view of the NPG-based FET device. c Drain current (I d) versus gate voltage (V g) for a FET device with w = 25.0 ± 4.3 nm. (The electronic measurement was carried out in ambient conditions at room temperature.) d I d versus V g for a device with w = 11.1 ± 3.2 nm