Fig. 2From: Controlled growth of Si-based heterostructure nanowires and their structural and electrical propertiesCross-section FESEM images of the nanowires prepared by HWCVD at filament temperature of 1850 °C. a, b The FESEM images in the secondary electron and backscattered electron signals, respectively. c The backscattered electron signal collected by a photodiode-backscattered electron (PDBSE) detector attached to the SEM. Insets of the figures present high magnification of the FESEM images. The scale bar in the insets is about 1 μmBack to article page