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Fig. 2 | Nanoscale Research Letters

Fig. 2

From: Controlled growth of Si-based heterostructure nanowires and their structural and electrical properties

Fig. 2

Cross-section FESEM images of the nanowires prepared by HWCVD at filament temperature of 1850 °C. a, b The FESEM images in the secondary electron and backscattered electron signals, respectively. c The backscattered electron signal collected by a photodiode-backscattered electron (PDBSE) detector attached to the SEM. Insets of the figures present high magnification of the FESEM images. The scale bar in the insets is about 1 μm

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