Fig. 2From: Simulation Analysis on Photoelectric Conversion Characteristics of Silicon Nanowire Array PhotoelectrodesInfluences of nanowire diameter. Spatial distributions of photogenerated carriers inside a quarter of the calculated unit (a–c) with the same color bar, J-V curves (d–f), and IQE and η as a function of N d (g–i) for SiNWA photoelectrode with d = 100 nm (a, d, g), 150 nm (b, e, h), and 250 nm (c, f, i)Back to article page