Fig. 2From: Evidence for Kinetic Limitations as a Controlling Factor of Ge Pyramid Formation: a Study of Structural Features of Ge/Si(001) Wetting Layer Formed by Ge Deposition at Room Temperature Followed by Annealing at 600 °CRHEED patterns obtained at room temperature after sample cooling. E = 10 keV; a [110] and b [100] azimuths; streaks of the 2 × 1 structure and 3D reflexes (discontinuous streaks) are observedBack to article page