Fig. 3From: Evidence for Kinetic Limitations as a Controlling Factor of Ge Pyramid Formation: a Study of Structural Features of Ge/Si(001) Wetting Layer Formed by Ge Deposition at Room Temperature Followed by Annealing at 600 °CSTM micrographs of the annealed sample obtained at different points on the surface. A usual M ×N reconstruction composed by p(2 × 2) and c(4 × 2) reconstructed patches is observed (the p(2 × 2) reconstruction is seen as in-phase zigzags, the c(4 × 2) one is seen as anti-phase zigzags). a–c The images were obtained at different points on a sampleBack to article page