Fig. 4From: Evidence for Kinetic Limitations as a Controlling Factor of Ge Pyramid Formation: a Study of Structural Features of Ge/Si(001) Wetting Layer Formed by Ge Deposition at Room Temperature Followed by Annealing at 600 °CSTM images of the Ge/Si(001) wetting layers grown at different conditions. a T gr = 360 °C, h Ge = 4 Å; b T gr = 600 °C, h Ge = 6 Å; c T gr = 650 °C, h Ge = 4 ÅBack to article page