Fig. 5From: Evidence for Kinetic Limitations as a Controlling Factor of Ge Pyramid Formation: a Study of Structural Features of Ge/Si(001) Wetting Layer Formed by Ge Deposition at Room Temperature Followed by Annealing at 600 °CSTM micrographs of Ge huts forming at different conditions. a T gr = 360 °C, h Ge = 7 Å; b T gr = 600 °C, h Ge = 6 ÅBack to article page