Fig. 6From: Evidence for Kinetic Limitations as a Controlling Factor of Ge Pyramid Formation: a Study of Structural Features of Ge/Si(001) Wetting Layer Formed by Ge Deposition at Room Temperature Followed by Annealing at 600 °C a–d STM images of Ge clusters observed on the wetting layer after annealing at 600 °C of the Ge film deposited at the room temperature. h Ge = 7 ÅBack to article page