Fig. 2

a GIXD diffraction pattern of Sn:In₂O₃ NWs containing <1 % Sn, 2 % Sn, and 4 % Sn that were exposed to H₂S at 300 °C for 60 min. The peaks have been labeled with increasing angle in ascending order as follows and b GIXD diffraction pattern of Sn:In₂O₃ NWs containing 2 % Sn and 4 % Sn that were exposed to H₂S at 400 °C for 30 min The diffracted peaks are labeled by in ascending order and increasing angle