Fig. 3From: Electrical, structural, and optical properties of sulfurized Sn-doped In2O3 nanowiresPL spectra of SnO2 (a), Sn:In2O3 (b), and SnS2:In2O3 (c) NWs obtained from Sn:In2O3 exposed to H2S at 300 °C for 60 min, taken at 300 K. Left inset shows the I–V characteristic of the Sn:In2O3 and SnS2:In2O3 NWs; right inset shows EDX spectrum of the Sn:In2O3 NWs processed at 400 °CBack to article page