Fig. 1From: Capacitance-Voltage Characteristics of Thin-film Transistors Fabricated with Solution-Processed Semiconducting Carbon Nanotube NetworksThin-film transistors based on solution-processed random networks of semiconducting carbon nanotubes. a Schematic of the device structure. b–e AFM images of the networks deposited by immersing the substrate into 0.01 mg ml−1 sSWCNT solution for 5, 15, 30, and 90 min, respectively. Scale bars in b–e, 1 μmBack to article page