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Fig. 2 | Nanoscale Research Letters

Fig. 2

From: Capacitance-Voltage Characteristics of Thin-film Transistors Fabricated with Solution-Processed Semiconducting Carbon Nanotube Networks

Fig. 2

I SD-V GS characteristics of the TFTs with overlap gates. a I SD-V GS curves measured at a VDS of −5 V for devices (L = 10 μm, W = 100 μm) with different deposition times and thereby different network densities. bd On/off ratio vs. L (b), width normalized on-current vs. 1/L (c), and width normalized transconductance vs. 1/L (d) for devices with different network densities

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