Fig. 2

I _SD-V _GS characteristics of the TFTs with overlap gates. a I _SD-V _GS curves measured at a VDS of −5 V for devices (L = 10 μm, W = 100 μm) with different deposition times and thereby different network densities. b–d On/off ratio vs. L (b), width normalized on-current vs. 1/L (c), and width normalized transconductance vs. 1/L (d) for devices with different network densities