Fig. 4From: In2O3 Nanotower Hydrogen Gas Sensors Based on Both Schottky Junction and Thermoelectronic Emission a Temperature-dependent I-V characteristics for representative Cr/In2O3 nanotower Schottky diode before H2 exposure. b Variation of barrier height (φ B) and ideality factor (n) with temperature for Cr/In2O3 nanotower Schottky diodeBack to article page