Fig. 2

High-performance TFTs using semiconducting carbon nanotubes (sSWCNTs). a Schematics of TFTs on rigid (upper left) and flexible (upper right) substrates. The SEM (lower left) and AFM (lower right) images of the channel region are also shown. b Electrical characteristics of the flexible TFTs. Upper left: I _d-V _g curves of transistors with different channel lengths. Upper right: TFT on/off current ratio as a function of channel length. Lower left: normalized on-current and transconductance as functions of reciprocal channel length. Lower right: field-effect mobility, calculated based on C-V measurement (green), as a function of channel length. Also shown are the mobility obtained using parallel plate model (blue) and cylindrical model (red). Reproduced from ref. [12]