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Fig. 1 | Nanoscale Research Letters

Fig. 1

From: Ultrafast Spectroscopy and Red Emission from β-Ga2O3/β-Ga2S3 Nanowires

Fig. 1

a XRD of β-Ga2O3 NWs before and after post growth processing under H2S at 400, 500, and 600 °C for 60 min. Black arrows at the top correspond to β-Ga2O3 and gray to β-Ga2S3 while the Al peaks belong to the holder; inset shows a SEM image of the β-Ga2S3 /β-Ga2O3 NWs at 500 °C. b Steady-state transmission of as-grown β-Ga2O3 NWs at 300 K and β-Ga2O3/Ga2S3 NWs obtained under H2S at 400, 500, and 600 °C. The optical band gap is estimated from the x intercept of the inset, where (αhν)2 is plotted as a function of photon energy

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