Fig. 5From: Ultrafast Spectroscopy and Red Emission from β-Ga2O3/β-Ga2S3 NanowiresDifferential absorption through β-Ga2O3 NWs grown on fused silica after processing with H2S at 500 °C versus optical delay using λ E = 266 nm and λ p = 340 to 850 nm. The inset shows a schematic energy band diagram and the various processes following photo-excitation of the β-Ga2O3/Ga2S3 NWsBack to article page