Fig. 6From: Copper-Assisted Direct Growth of Vertical Graphene Nanosheets on Glass Substrates by Low-Temperature Plasma-Enhanced Chemical Vapour Deposition ProcessSchematic growth process of VG film on glass substrate in a PECVD system. a Dissociation of carbon-hydrogen bonds by plasma. b Formation of the carbon buffer layer on the glass substrate. c Simultaneous growth of graphene and carbon islands. d Sheath effect and ion bombardment between bulk plasma and the substrate. e Sparse distribution of VG nanosheets prepared by PECVD process without the copper catalyst on the glass substrate. f, g Schematic growth process of the VG film by enhancement of copper catalyst. f Dissociation of hydrocarbon gas on the surface of copper. The dissociated reactive radicals transport to bulk plasma and increase the radical density. g Dense distribution of the VG nanosheets prepared by PECVD process with the copper catalyst on the glass substrateBack to article page