Fig. 1

Fabrication details for the PZT nanodot arrays. a Schematic illustration of the fabrication procedures of ordered PZT nanodot arrays by one-step mask etching method, utilizing the barrier layer of AAO as mask: (i) the first long-time etching by the Ar IBE to remove the above porous structure of AAO, (ii) the second etching of short time with the barrier layer as mask, and (iii) removal of the remaining barrier layer. Corresponding tilted side-view and top-view SEM images of each step are shown in b and c, respectively. Scale bars are 200 nm