Fig. 5From: Effects of Energy Relaxation via Quantum Coupling Among Three-Dimensional Motion on the Tunneling Current of Graphene Field-Effect TransistorsThe tunneling current as a function of the energy relaxation time of electron with the oxide thickness of 10 nm. The oxide field is 5 MV/cm, the electronic mobility is 20,000 cm2 V−1 s−1, the channel field is 5 kV/cm, and the device temperature is 300 KBack to article page