Fig. 8
a Tunneling current as a function of the gate thickness at different channel fields. The gate field is 5 MV/cm, the electronic mobility is 20,000 cm2 V−1 s−1, the energy relaxation time is 1 ps, and the device temperature is 300 K. b Tunneling current as a function of the gate thickness at different oxide fields. The channel electric field is 4 kV/cm