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Fig. 2 | Nanoscale Research Letters

Fig. 2

From: CMOS-Compatible Top-Down Fabrication of Periodic SiO2 Nanostructures using a Single Mask

Fig. 2

SEM images of the fabrication of highly ordered and periodic SiO2 nanoline arrays with 40 nm line width and 40-nm spacing. a The resist nanoline arrays are patterned by e-beam lithography, and the bright area is the line. b Nanoline patterns are precisely transferred into the underlying α-Si mask. c SiO2 nanoline arrays are directly formed only by a single α-Si mask without complex patterning structures

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