Fig. 2
From: CMOS-Compatible Top-Down Fabrication of Periodic SiO2 Nanostructures using a Single Mask
SEM images of the fabrication of highly ordered and periodic SiO2 nanoline arrays with 40 nm line width and 40-nm spacing. a The resist nanoline arrays are patterned by e-beam lithography, and the bright area is the line. b Nanoline patterns are precisely transferred into the underlying α-Si mask. c SiO2 nanoline arrays are directly formed only by a single α-Si mask without complex patterning structures