Fig. 5From: CMOS-Compatible Top-Down Fabrication of Periodic SiO2 Nanostructures using a Single MaskCross-sectional and top-down SiO2 nanohole SEM views. a Arrays of α-Si mask nanohole are patterned by Cl2/HBr/O2 plasma chemistry. b SiO2 nanotrench arrays fabricated show an almost vertical etched profile with smooth sidewalls, and here, the α-Si mask has been removed selectively. c Top view of (b) showing a highly uniform etch performanceBack to article page