Fig. 2
RT-PL spectra of GaAs/AlGaAs core-shell nanowires on Si (100) and Si (111) substrates. The two samples showed bulk-like emission peaks close to GaAs and Al0.1Ga0.9As bandgaps. GaAs PL emission intensity of the sample grown on Si (111) is roughly three times higher than that of the sample on Si (100). The PL intensity of Al0.1Ga0.9As relative to GaAs is 30 % better when CSNWs are grown on Si (111) compared to Si (100)