Fig. 3From: Dynamics of Optically-Generated Carriers in Si (100) and Si (111) Substrate-Grown GaAs/AlGaAs Core-Shell NanowiresGaAs core TRPL of core-shell nanowires on Si (100) and Si (111) at room temperature. The carrier recombination rate of the GaAs core on Si (100)-grown CSNWs is faster than that on Si (111)-grown sampleBack to article page