Fig. 4From: Dynamics of Optically-Generated Carriers in Si (100) and Si (111) Substrate-Grown GaAs/AlGaAs Core-Shell NanowiresLogarithmic THz intensity of the GaAs core and semi-insulating GaAs (100) substrate. THz emission from the GaAs component of CSNW samples is one order of magnitude higher than that of GaAs wafer. The inset shows the corresponding time domain data, indicating that the generation of THz takes place in less than 5 ps. The signals were offset vertically for clarityBack to article page