Fig. 2
From: Tunneling in Systems of Coupled Dopant-Atoms in Silicon Nano-devices
Electron injection in individual donor atoms observed by KPFM. a Sequence of electronic potential landscapes measured at low temperature (T = 13 K) on the channel of an SOI-FET doped with P-donors (N D ≈ 1 × 1018 cm−3) as a function of applied V BG (−3 ~ 0 V). b A simple illustration of one-by-one neutralization of individual P-donors at different V BGs [23]