Fig. 3
From: Tunneling in Systems of Coupled Dopant-Atoms in Silicon Nano-devices
Donor-cluster-induced potential modulations observed by KPFM. KPFM measurement of the electronic potential map for a selectively doped high-N D SOI-FET channel (with doping profile indicated on the top panel). Doping concentration for these devices is estimated to be N D ≈ 1 × 1019 cm−3. Inside the P-doped slit, dark-contrast, deep-potential regions can be seen for V BG = −4 V (marked by a dashed circle in the left panel) but are smeared out for V BG = 0 V (right panel)