Fig. 7
From: Tunneling in Systems of Coupled Dopant-Atoms in Silicon Nano-devices
Overview of key factors toward high-temperature tunneling operation. Research directions and critical factors for conduction modes of SETs (with lithographically defined dots) and dopant-atom transistors. The diagram is displayed as a function of number of dots or dopants involved in transport (vertical axis) and temperature in low, medium, high range, i.e., LT, MT, HT (horizontal axis). Relevant references for each conduction mode are also indicated in the diagram