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Table 1 Growth conditions of different AlN NW samples

From: MBE Growth of AlN Nanowires on Si Substrates by Aluminizing Nucleation

Samples

Aluminization temperature (°C)

Al source temperature (°C)

N2 flow rate (sccm)

Growth temperature (°C)

Growth time (h)

A

N.A.

1220

1.7

960

3

B

850

1220

1.7

960

1

C

900

1220

1.7

960

1

D

950

1220

1.7

960

1

E

900

1220

1.7

940

1

F

900

1220

1.7

980

1

G

900

1200

1.7

960

1

H

900

1240

1.7

960

1

J

900

1240

1.7

960

3

K

900

1220

1.7

960

3

L

900

1180

1.7

960

3

M

900

1220

2.5

960

3

O

900

1220

3.0

960

3

P

900

1240

2.5

960

3

Q

950

1240

2.5

960

3

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