Fig. 2From: Resistive and New Optical Switching Memory Characteristics Using Thermally Grown Ge0.2Se0.8 Film in Cu/GeSex/W StructureCurrent–voltage characteristics. Current–voltage hysteresis phenomena of thermally deposited GeSex film in Cu/GeSex/W structure. Multi-step RESET characteristics are observed owing to conical-shaped Cu filament is formed after CC of 300 μABack to article page