Fig. 4From: Resistive and New Optical Switching Memory Characteristics Using Thermally Grown Ge0.2Se0.8 Film in Cu/GeSex/W StructureEndurance and data retention characteristics. a Stable P/E endurance of >200 cycles of the Cu/GeSex/W structure is obtained. b Good data retention characteristics of >7000 s at 85 °C are observedBack to article page